| PART |
Description |
Maker |
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| H11D3M |
IGBT; VCES (V): 400; Ic (A): 150; VGES (V): 6; Condition ICES at VCE=400V,VGE=0V (µA): 10; Condition IGES at VGE=VGES,VCE=0V (µA): ±10; Condition VGE (th) at VCE=10V,IC=1mA (V): 1.5; Package Code: PTSP0008JB-B (TTP-8DV)
|
Fairchild Semiconductor Corporation
|
| IRG4BC10KD IRG4BC10KDPBF |
9 A, 600 V, N-CHANNEL IGBT, TO-220AB
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|
| 1MBI400NB-120 |
IGBT module 400 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| SPMQ613-02TXV |
400 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-8
600V, 400A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
|
| IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package
600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
| IRG4PH50U |
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
| IRG4BC20U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4PC40FD IRG4PC40 IRG4PC40FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
